Monitoring of SRAM gate patterns in KrF lithography by ellipsometry

被引：4

作者：

Arimoto, H ^{[1
]}

Nakamura, S ^{[1
]}

Miyata, S ^{[1
]}

Nakagawa, K ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi 24301, Japan

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 1999年 / 12卷 / 02期

关键词：

D O I：

10.1109/66.762873

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports on the ellipsometric monitoring of SRAM gate patterns in KrF lithography, Results showed that ellipsometry is practical for monitoring repetitive patterns. A multivariable regression analysis was applied to predict gate lengths by using ellipsometric parameters. A good agreement (3 sigma = 8.7 nm) between the measured width by CD-SEM and the predicted ones was achieved. Standard deviation of the predicted width (repeatability) was 0.5 nm, This suggests that ellipsometry is superior to CD-SEM in arriving at the average values.

引用

页码：166 / 169

页数：4

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