Proton SEU rate predictions

被引：2

作者：

McNulty, PJ ^{[1
]}

Savage, MW ^{[1
]}

Roth, DR ^{[1
]}

Foster, CC ^{[1
]}

机构：

[1] Clemson Univ, Kinard Lab 118, Clemson, SC 29634 USA

来源：

RADECS 97: FOURTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 1998年

关键词：

D O I：

10.1109/RADECS.1997.699006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge collection measurements show that proton-induced elastic interactions can dominate the production of SEUs in certain COTS parts when the value of the critical charge is sufficiently low. In the bulk device used in these measurements, the elastic recoils do not introduce any angular dependence nor are they energetic enough to upset the device. The spallation reactions should not introduce an angular dependence either because of the shape of the sensitive volume. However, an increase in charge-collection events is observed at very large angles of incidence, beginning at 78 degrees. This increase appears to be caused by secondary particles generated in the side walls of the chip's packaging, and this contribution would be significant for SEU production in devices with low values of the critical charge but not for those with large values.

引用

页码：570 / 575

页数：6