Time-resolved photoluminescence of porous silicon under double-pulse excitation

被引：2

作者：

Komuro, S ^{[1
]}

Morikawa, T ^{[1
]}

OKeeffe, P ^{[1
]}

Aoyagi, Y ^{[1
]}

机构：

[1] RIKEN, SEMICOND LAB, WAKO, SAITAMA 35101, JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 198卷

关键词：

D O I：

10.1016/0022-3093(96)00097-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In naturally oxidized porous Si (PS) it was found that the blue-green emission band centered at 440 nm appears and its photoluminescence (PL) intensity is enhanced by a double-pulse excitation. The PL enhancement of the blue-green band strongly depends on the pulse time interval between the first pulse and the second pulse. This means that the PL enhancement is due to the radiative recombination of carriers re-excited by the second pulse. The origin of the PL is considered to be radiative transitions via oxygen induced defect states. The time decay of PL is not single exponential but takes a double-exponential form. A simple carrier recombination model taking account of oxygen induced defect states is proposed on the basis of the time-resolved PL induced by double-pulse excitation.

引用

页码：965 / 968

页数：4

共 13 条

[1]

BRANDT MS, 1992, SOLID STATE COMMUN, V81, P302

[2]

CANHAM LT, 1990, APPL PHYS LETT, V57, P1096

[3] LARGE BLUE SHIFT OF LIGHT-EMITTING POROUS SILICON BY BOILING WATER-TREATMENT [J].