Self-assembling of Ge quantum dots in an alumina matrix

被引：29

作者：

Buljan, M. ^{[1
]}

Pinto, S. R. C. ^{[2
,3
]}

Rolo, A. G. ^{[2
,3
]}

Martin-Sanchez, J. ^{[2
,3
]}

Gomes, M. J. M. ^{[2
,3
]}

Grenzer, J. ^{[4
]}

Muecklich, A. ^{[4
]}

Bernstorff, S. ^{[5
]}

Holy, V. ^{[6
]}

机构：

[1] Rudjer Boskovic Inst, Zagreb 10000, Croatia

[2] Univ Minho, Ctr Phys, P-4710057 Braga, Portugal

[3] Univ Minho, Dept Phys, P-4710057 Braga, Portugal

[4] Forschungszentrum Dresden Rossendorf EV, D-01314 Dresden, Germany

[5] Sincrotrone Trieste, I-34012 Basovizza, Italy

[6] Charles Univ Prague, Prague 12116, Czech Republic

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 23期

关键词：

NANOCRYSTALS; NANOSTRUCTURES; SILICON; E(1);

D O I：

10.1103/PhysRevB.82.235407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we report on a self-assembled growth of a Ge quantum dot lattice in a single 600-nm-thick Ge+Al(2)O(3) layer during magnetron sputtering deposition of a Ge+Al(2)O(3) mixture at an elevated substrate temperature. The self-assembly results in the formation of a well-ordered three-dimensional body-centered tetragonal quantum dot lattice within the whole deposited volume. The quantum dots formed are very small in size (less than 4.0 nm), have a narrow size distribution and a large packing density. The parameters of the quantum dot lattice can be tuned by changing the deposition parameters. The self-ordering of the quantum dots is explained by diffusion-mediated nucleation and surface-morphology effects and simulated by a kinetic Monte Carlo model.

引用

页数：7

共 24 条

[11] Ge-nanodot multilayer nonvolatile memories [J].