The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown

被引：45

作者：

Alam, MA ^{[1
]}

Weir, BE ^{[1
]}

Silverman, PJ ^{[1
]}

Ma, Y ^{[1
]}

Hwang, D ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Soft and hard breakdown result from the statistical distribution of the percolation conductance, rather than any physical difference between the traps involved. The distribution obtained confirms some subtle and surprising predictions of the percolation model and shows that the effective trap-diameter is less than 1.5 nm. It also demonstrates that 1.5 nm oxides at 1V can not undergo hard breakdown.

引用

页码：529 / 532

页数：4

共 14 条

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