Extraction of density profile for near perfect multilayers

被引：39

作者：

Sanyal, MK ^{[1
]}

Hazra, S ^{[1
]}

Basu, JK ^{[1
]}

Datta, A ^{[1
]}

机构：

[1] Saha Inst Nucl Phys, Surg Phys Div, Kolkata 700064, W Bengal, India

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.58.R4258

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple inversion scheme, based on Born approximation, to determine the electron density profile of near perfect multilayers from specular x-ray reflectivity data has been presented. This scheme is useful for semiconductor multilayers and other thin films, which are grown almost according to the designed parameters. We also indicate the possibility of separating out the contribution of interdiffusion and roughness in electron density profiles of interfaces by utilizing information obtained from the analysis of diffuse scattering data. The extracted compositional profile was used to calculate structural details of epitaxial films along the growth direction. Simulated and metal organic vapor phase epitaxy grown InP/InxGa1-xAs/InP quantum-well systems have been used to demonstrate this scheme.

引用

页码：R4258 / R4261

页数：4

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