Tunable supercurrent through semiconductor nanowires

被引:430
作者
Doh, YJ
van Dam, JA
Roest, AL
Bakkers, EPAM
Kouwenhoven, LP
De Franceschi, S
机构
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
关键词
D O I
10.1126/science.1113523
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Nanoscale superconductor/semiconductor hybrid devices are assembled from indium arsenide semiconductor nanowires individually contacted by aluminum-based superconductor electrodes. Below 1 kelvin, the high transparency of the contacts gives rise to proximity-induced superconductivity. The nanowires form superconducting weak links operating as mesoscopic Josephson junctions with electrically tunable coupling. The supercurrent can be switched on/off by a gate voltage acting on the electron density in the nanowire. A variation in gate voltage induces universal fluctuations in the normal-state conductance, which are clearly correlated to critical current fluctuations. The alternating-current Josephson effect gives rise to Shapiro steps in the voltage-current characteristic under microwave irradiation.
引用
收藏
页码:272 / 275
页数:4
相关论文
共 29 条
  • [1] Al'tshuler B. L., 1987, Soviet Physics - JETP, V65, P343
  • [2] ANDREEV AF, 1964, SOV PHYS JETP-USSR, V19, P1228
  • [3] Epitaxial growth of InP nanowires on germanium
    Bakkers, EPAM
    Van Dam, JA
    De Franceschi, S
    Kouwenhoven, LP
    Kaiser, M
    Verheijen, M
    Wondergem, H
    Van der Sluis, P
    [J]. NATURE MATERIALS, 2004, 3 (11) : 769 - 773
  • [4] UNIVERSAL LIMIT OF CRITICAL-CURRENT FLUCTUATIONS IN MESOSCOPIC JOSEPHSON-JUNCTIONS
    BEENAKKER, CWJ
    [J]. PHYSICAL REVIEW LETTERS, 1991, 67 (27) : 3836 - 3839
  • [5] Few-electron quantum dots in nanowires
    Bjork, MT
    Thelander, C
    Hansen, AE
    Jensen, LE
    Larsson, MW
    Wallenberg, LR
    Samuelson, L
    [J]. NANO LETTERS, 2004, 4 (09) : 1621 - 1625
  • [6] Multiple Andreev reflections in a carbon nanotube quantum dot -: art. no. 057005
    Buitelaar, MR
    Belzig, W
    Nussbaumer, T
    Babic, B
    Bruder, C
    Schönenberger, C
    [J]. PHYSICAL REVIEW LETTERS, 2003, 91 (05)
  • [7] High characteristic voltages in Nb/p-type InAs/Nb Josephson junctions
    Chrestin, A
    Merkt, U
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (23) : 3149 - 3151
  • [8] FEASIBILITY OF HYBRID JOSEPHSON FIELD-EFFECT TRANSISTORS
    CLARK, TD
    PRANCE, RJ
    GRASSIE, ADC
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2736 - 2743
  • [9] Single-electron tunneling in InP nanowires
    De Franceschi, S
    van Dam, JA
    Bakkers, EPAM
    Feiner, LF
    Gurevich, L
    Kouwenhoven, LP
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (02) : 344 - 346
  • [10] DEGENNES PG, 1964, REV MOD PHYS, V36, P216