2.3 picoseconds optical gate monolithically integrating photodiode and electroabsorption modulator

被引：29

作者：

Kodama, S ^{[1
]}

Ito, T ^{[1
]}

Watanabe, N ^{[1
]}

Kondo, S ^{[1
]}

Takeuchi, H ^{[1
]}

Ito, H ^{[1
]}

Ishibashi, T ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 19期

关键词：

D O I：

10.1049/el:20010780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel ultra-high-speed optical gate monolithically integrating a uni-travelling-carrier photodiode and a travelling-wave electroabsorption modulator MV-EW is presented. By using the nonlinear extinction characteristics of the EAM, the minimum gate opening time of 2.3 picoseconds with an extinction ratio of 14 dB is achieved.

引用

页码：1185 / 1186

页数：2

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