Numerical model for organic light-emitting diodes

被引:73
作者
Tutis, E
Bussac, MN
Masenelli, B
Carrard, M
Zuppiroli, L [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Dept Phys, Lab Phys Solides Semicristallins, CH-1015 Lausanne, Switzerland
[2] Ecole Polytech, Ctr Phys Theor, F-91128 Palaiseau, France
关键词
D O I
10.1063/1.1327286
中图分类号
O59 [应用物理学];
学科分类号
摘要
An extensive numerical model recently developed for the multilayer organic light-emitting diode is described and applied to a set of real devices. The model contains a detailed description of electrical contacts including dipolar layer formation, thermionic and tunneling injection, space charge effects, field dependent mobilities and recombination processes. The model is applied to simulate several single layer devices and the family of bilayer devices made in our group. It provides insight into the energy level shifts, internal electric fields and charge distribution (and consequently recombination) throughout the device. Finally, the analysis is extended to the optimization of bilayer device. (C) 2001 American Institute of Physics.
引用
收藏
页码:430 / 439
页数:10
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