Investigation of bulk and interfacial properties of Ba0.5Sr0.5TiO3 thin film capacitors

被引：101

作者：

Zafar, S ^{[1
]}

Jones, RE ^{[1
]}

Chu, P ^{[1
]}

White, B ^{[1
]}

Jiang, B ^{[1
]}

Taylor, D ^{[1
]}

Zurcher, P ^{[1
]}

Gillepsie, S ^{[1
]}

机构：

[1] Motorola Inc, Mat Res & Strateg Technol, Austin, TX 78721 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 22期

关键词：

D O I：

10.1063/1.121495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report the results for capacitance versus frequency measurements on a set of Ba0.5Sr0.5TiO3 (BST) capacitors with platinum electrodes (Pt) and varying BST film thicknesses. The study shows th:lt Pt/BST interfacial capacitance is independent of frequency whereas the bulk dielectric constant has a power law dependence on frequency. Also, the bulk dielectric constant is observed to decrease whereas the interfacial capacitance increases with increasing temperature. In addition, we report the dependence of dielectric dispersion on BST film thickness and temperature. Calculations are performed which provide insights into the observed dispersion effects. (C) 1998 American Institute of Physics.

引用

页码：2820 / 2822

页数：3

共 5 条

[1] DIELECTRIC-RELAXATION OF (BA,SR)TIO3 THIN-FILMS [J].

HORIKAWA, T ;

MAKITA, T ;

KUROIWA, T ;

MIKAMI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5478-5482

[2] Low temperature fabrication of (Ba,Sr)TiO3 thin films by ECR plasma CVD [J].

Kato, Y ;

Yabuta, H ;

Sone, S ;

Yamaguchi, H ;

Iizuka, T ;

Yamamichi, S ;

Lesaicherre, PY ;

Nishimoto, S ;

Yoshida, M .

FERROELECTRIC THIN FILMS V, 1996, 433 :3-8

[3]

KINGON AI, 1996, MRS BULL, P46

[4] A review of high dielectric materials for DRAM capacitors [J].

Kotecki, DE .

INTEGRATED FERROELECTRICS, 1997, 16 (1-4) :1-19

[5]

TSENG TY, 1996, P 1996 INT EL DEV C, V2, P86

← 1 →