Growth and thermal studies of SnSe single crystals

被引：39

作者：

Agarwal, Ajay

Chaki, Sunil H. ^{[1
]}

Lakshminarayana, D.

机构：

[1] Veer Narmad S Gujarat Univ, Shri Jayendrapuri Arts & Sci Coll, Dept Phys, Gujarat 392002, India

[2] Gujarat Univ, Shri RK Parikh Arts & Sci Coll, Dept Phys, Gujarat 388450, India

[3] Sardar Patel Univ, Dept Elect, Vallabh Vidyanagar 388120, Gujarat, India

来源：

MATERIALS LETTERS | 2007年 / 61卷 / 30期

关键词：

SnSe; crystal growth; thermal properties; TGA; DTA;

D O I：

10.1016/j.matlet.2007.04.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystals of SnSe have been grown by a direct vapour transport (DVT) technique. The confirmation of single crystallinity and lattice parameter determination of the grown crystals have been made by using electron and X-ray diffraction techniques respectively. The thermal analysis of the crystals has been studied by the well known TGA and DTA techniques. The results obtained during the analysis showed the stability of SnSe phase at higher temperatures. The implications of the results have been discussed. (c) 2007 Published by Elsevier B.V.

引用

页码：5188 / 5190

页数：3

共 5 条

[1] Impact of electrical resistance and TEP in layered SnSe crystals under high pressure [J].