Dynamic behavior of thermionic dispenser cathodes under ion bombardment

被引:8
作者
Cortenraad, R
van der Gon, AWD
Brongersma, HH
Gärtner, G
Raasch, D
Manenschijn, A
机构
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[2] Philips Res Labs, D-52066 Aachen, Germany
[3] Philips Components, NL-5600 MD Eindhoven, Netherlands
关键词
D O I
10.1063/1.1356433
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the surface coverage and electron emission of thermionic dispenser cathodes during 3 keV Ar+ ion bombardment, thereby simulating the bombardment of the cathodes by residual gases that takes place in cathode-ray tubes as used in television sets. During the ion bombardment at the operating temperature of 1030 degreesC, a dynamic equilibrium is established between the sputter removal and resupply mechanisms of the Ba and O atoms that form the dipole layer on the cathode substrate. We demonstrated that the performance of the cathodes under ion bombardment is governed by the O removal and resupply rates. It was found that the Ba resupply rate is almost an order of magnitude higher than the O resupply rate, but that the Ba can only be present on the surface bound to O atoms. Therefore, the Ba/O ratio is approximately equal to unity during the ion bombardment. Based on the investigations of the removal and resupply processes, we proposed a model that accurately describes the surface coverage and electron emission during the ion bombardment, including the dependence of the ion flux and cathode temperature. (C) 2001 American Institute of Physics.
引用
收藏
页码:4354 / 4364
页数:11
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