Tunnel magnetoresistance in nanojunctions based on Sr2FeMoO6

被引:91
作者
Bibes, M
Bouzehouane, K
Barthélémy, A
Besse, M
Fusil, S
Bowen, M
Seneor, P
Carrey, J
Cros, V
Vaurès, A
Contour, JP
Fert, A
机构
[1] Unite Mixte Phys CNRS Thales, F-91404 Orsay, France
[2] Univ Evry, F-91025 Evry, France
关键词
D O I
10.1063/1.1612902
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the observation of magnetoresistance in a Sr2FeMoO6 (SFMO)-based tunnel junction. This result is obtained by combining a three-step process for the growth of the Sr2FeMoO6 layer by pulsed laser deposition with a technology allowing the definition of nanometer-sized junctions. A clear positive magnetoresistive signal of 50% is obtained at low temperature in a Sr2FeMoO6/SrTiO3/Co junction. Since the SrTiO3/Co interface is known to have a negative spin polarization of about 20%, this result yields a negative spin polarization of SFMO, which we find to amount to more than 85% in our film. This confirms the half-metallic character of this compound, predicted by band structure calculations. (C) 2003 American Institute of Physics.
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收藏
页码:2629 / 2631
页数:3
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