In-depth characterization of damage produced by swift heavy ion irradiation using a tapping mode atomic force microscope

被引:2
作者
Biro, LP [1 ]
Gyulai, J [1 ]
Havancsak, K [1 ]
机构
[1] EOTVOS LORAND UNIV, INST SOLID STATE PHYS, H-1088 BUDAPEST, HUNGARY
来源
MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES | 1997年 / 248-2卷
关键词
in-depth damage characterization; swift heavy ions; tapping mode; AFM; parallel irradiation; Si; HOPG; mica; cleavage;
D O I
10.4028/www.scientific.net/MSF.248-249.129
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The damage produced by 209 MeV Kr ions in three different materials, muscovite mica (MM), an insulator; Si, a semiconductor; and Highly Oriented Pyrolithic Graphite (HOPG), a semimetal is investigated in the entire depth of penetration. The comparison of damage in the three materials shows similarities between MM and HOPG, while the damage found on Si is completely different from that found in the previous two. In all three materials damage produced around the trajectory of individual particles was identified. Production mechanisms are proposed for the observed features. The contrast mechanism of Tapping Mode AFM is discussed for some of the observed features.
引用
收藏
页码:129 / 134
页数:6
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