Sawtooth faceting in silicon nanowires

被引：358

作者：

Ross, FM ^{[1
]}

Tersoff, J ^{[1
]}

Reuter, MC ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.95.146104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We observe in situ the vapor-liquid-solid (VLS) growth of Si nanowires, in UHV-CVD using Au catalyst. The nanowire sidewalls exhibit periodic sawtooth faceting, reflecting an oscillatory growth process. We interpret the facet alternation as resulting from the interplay of the geometry and surface energies of the wire and liquid droplet. Such faceting may be present in any VLS growth system in which there are no stable orientations parallel to the growth direction. The sawtooth structure has important implications for electronic mobility and scattering in nanowire devices.

引用

页数：4

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