Interfacial structure in semiconducting polymer devices

被引:45
作者
Higgins, AM
Martin, SJ
Jukes, PC
Geoghegan, M
Jones, RAL
Langridge, S
Cubitt, R
Kirchmeyer, S
Wehrum, A
Grizzi, I
机构
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Rutherford Appleton Lab, ISIS, Didcot OX11 0QX, Oxon, England
[3] Inst Max Von Laue Paul Langevin, F-38042 Grenoble 9, France
[4] HC Starck GMBH, Res & Dev, D-51368 Leverkusen, Germany
[5] Cambridge Display Technol, Cambridge CB3 0TX, England
关键词
D O I
10.1039/b304990f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We discuss some recent findings relating to the structure of interfaces in semiconducting polymer devices. The structure of three different types of interface is characterized via neutron reflectivity and scanning force microscopy. In the first example we find that enrichment of dopant occurs at the surface of a doped polymeric conductor, and that this enriched layer penetrates several nanometres into the material. Secondly, we find that the interface between a semiconducting polymer and an insulating polymer is not molecularly sharp, but is rather broad with a width typically of the order of 1 nm. Finally we present some initial neutron reflectivity measurements on the interface between two different semiconducting polymers (one of which is deuterated). Again we find that this interface is diffuse, with a typical width of the order of a few nanometres.
引用
收藏
页码:2814 / 2818
页数:5
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