Structural studies of strain-symmetrised modulation-doped Si/SiGe structures grown by molecular beam epitaxy

被引：4

作者：

Falub, CV ^{[1
]}

Meduna, M

Müller, E

Tsujino, S

Borak, A

Sigg, H

Grützmacher, D

Fromherz, T

Bauer, G

机构：

[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

[2] Johannes Kepler Univ, Inst Semicond Phys, A-4040 Linz, Austria

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

high-resolution X-ray diffraction; multiple quantum well structures; molecular beam epitaxy; Si/SiGe;

D O I：

10.1016/j.jcrysgro.2004.12.145

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this work, we present recent achievements on the low-temperature (∼ 300 ° C) molecular beam epitaxial growth of high Ge content Si/SiGe modulation-doped multiple quantum well structures on Si0.5Ge0.5 pseudosubstrates. High-resolution X-ray reflectivity and diffraction experiments performed at the Swiss Light Source synchrotron, as well as analysis by transmission electron microscopy, showed very good control of the growth parameters and interface r.m.s. roughness as low as 0.4nm. © 2005 Elsevier B.V. All rights reserved.

引用

页码：495 / 499

页数：5

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