Chemical optimization of self-assembled carbon nanotube transistors

被引:109
作者
Auvray, S
Derycke, V [1 ]
Goffman, M
Filoramo, A
Jost, O
Bourgoin, JP
机构
[1] CEA Saclay, DSM, Lab Elect Mol, F-91191 Gif Sur Yvette, France
[2] Tech Univ Dresden, Inst Werkstoffwissensch, D-01062 Dresden, Germany
关键词
D O I
10.1021/nl048032y
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present the improvement of carbon nanotube field effects transistors (CNTFETs) performances by chemical tuning of the nanotube/ substrate and nanotube/electrode interfaces. Our work is based on a method of selective placement of individual single walled carbon nanotubes (SWNTs) by patterned aminosilane monolayer and its use for the fabrication of self-assembled nanotube transistors. This method brings a relevant solution to the problem of systematic connection of self-organized nanotubes. The aminosilane monolayer reactivity can be used to improve carrier injection and doping level of the SWNT. We show that the Schottky barrier height at the nanotube/metal interface can be diminished in a continuous fashion down to an almost ohmic contact through these chemical treatments. Moreover, sensitivity to 20 ppb of triethylamine is demonstrated for self-assembled CNTFETs, thus opening new prospects for gas sensors taking advantages of the chemical functionality of the aminosilane used for assembling the CNTFETs.
引用
收藏
页码:451 / 455
页数:5
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