Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector

被引：144

作者：

Kim, S ^{[1
]}

Mohseni, H ^{[1
]}

Erdtmann, M ^{[1
]}

Michel, E ^{[1
]}

Jelen, C ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 07期

关键词：

D O I：

10.1063/1.122053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report InGaAs quantum dot intersubband infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The optimum growth conditions were studied to obtain uniform InGaAs quantum dots constructed in an InGaP matrix. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 mu m with a high responsivity of 130 mA/W and a detectivity of 4.74x 10(7) cm H-1/2/W at 77 K. (C) 1998 American Institute of Physics.

引用

页码：963 / 965

页数：3

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