ArF lasers for production of semiconductor devices with CD<0.15 μm

被引：11

作者：

Duffey, TP ^{[1
]}

Embree, T ^{[1
]}

Ishihara, T ^{[1
]}

Morton, R ^{[1
]}

Partlo, WN ^{[1
]}

Watson, T ^{[1
]}

Sandstrom, R ^{[1
]}

机构：

[1] Cymer Inc, San Diego, CA 92127 USA

来源：

OPTICAL MICROLITHOGRAPHY XI | 1998年 / 3334卷

关键词：

DUV lithography; ArF excimer laser; line-narrowing; 193; nm;

D O I：

10.1117/12.310731

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present day notion of the extensibility of KrF laser technology to ArF is revisited. We show that a robust solution to ArF requirements can be met by significantly altering the laser's core technology-discharge chamber, pulsed power and optics. With these changes, a practical ArF tool can be developed. Some of the laser specifications are: [GRAPHICS]

引用

页码：1014 / 1020

页数：3

ArF lasers for production of semiconductor devices with CD&lt;0.15 μm

ArF lasers for production of semiconductor devices with CD<0.15 μm