Photoluminescence of localized excitons in pulsed-laser-deposited GaN

被引：28

作者：

Cazzanelli, M

Cole, D

Donegan, JF

Lunney, JG

Middleton, PG

O'Donnell, KP

Vinegoni, C

Pavesi, L

机构：

[1] Trinity Coll, Dept Phys, Dublin 2, Ireland

[2] Univ Strathclyde, Dept Phys & Appl Phys, Glasgow, Lanark, Scotland

[3] Univ Trent, INFM, I-38100 Trent, Italy

[4] Univ Trent, Dipartimento Fis, I-38100 Trent, Italy

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 23期

关键词：

D O I：

10.1063/1.122776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Continuous-wave photoluminescence (PL) and time-resolved photoluminescence of gallium nitride layers grown by pulsed laser deposition are compared. The temperature dependence of the photoluminescence decay time and the PL-integrated intensity allows a determination of radiative and nonradiative time constants of GaN. We find that luminescence peaks centered at 3.360 and 3.305 eV at low temperature can be attributed to recombination of excitons localized at extended defects. The photoluminescence radiative lifetime at room temperature is on the order of tens of ns. (C) 1998 American Institute of Physics. [S0003-6951(98)00549-X].

引用

页码：3390 / 3392

页数：3

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