New structural systematics in the II-VI, III-V, and group-IV semiconductors at high pressure

被引:113
作者
McMahon, MI
Nelmes, RJ
机构
[1] Department of Physics and Astronomy, University of Edinburgh, Edinburgh
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1996年 / 198卷 / 01期
关键词
D O I
10.1002/pssb.2221980151
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A systematic study of the II-VI, III-V, and group-IV semiconductors using angle-dispersive diffraction techniques is revealing new structures and transitions that significantly modify the accepted structural systematics of these materials. Recent new results from Ge, ZnSe, InSb, and GaAs extend the range of some aspects already indicated by our previous work, and new intermediate phases have been found in InSb, and in HgSe and HgTe.
引用
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页码:389 / 402
页数:14
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