Characterization of Ba0.6Sr0.4TiO3 thin films with Mg additive fabricated by metalorganic decomposition technique

被引:6
作者
Joshi, PC
Ramanathan, S
Desu, SB
Stowell, S
Sengupta, S [1 ]
机构
[1] USA, Res Lab, Mat Directorate, Washington, DC 20310 USA
[2] Virginia Polytech Inst & State Univ, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA
关键词
ferroelectrics; thin films; MOD;
D O I
10.1080/10584589808012700
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report for the first time Ba0.6ST0.4TiO3 (BST 60/40) thin films with Mg additive fabricated by Metalorganic decomposition technique on platinum coated silicon substrates using acetate-alkoxide precursors.([1]) The structural and electrical properties of the BST thin films were greatly changed by additions of Mg. The surface morphology of the films was smooth with a dense microstructure. The typical small signal dielectric constant and the loss factor for a 0.4 mu m thick undoped BST films were 450 and 0.013, respectively, at an applied frequency of 100 kHz. The dielectric loss was significantly reduced by the Mg content. The tunability (Delta C/C-0) was found to change from 20.7% to 5.8% as the Mg additive content was changed from 0 to 20 mol%. The films exhibited high resistivity of the order of 10(12) Ohm-cm even up to an applied electric field of 100 kV/cm.
引用
收藏
页码:141 / +
页数:9
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