Analytical Modeling of a Nanogap-Embedded FET for Application as a Biosensor

被引：113

作者：

Choi, Ji-Min ^{[1
]}

Han, Jin-Woo ^{[1
]}

Choi, Sung-Jin ^{[1
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 12期

关键词：

Biotransistor; Dielectric-modulated field-effect transistor (DMFET); field-effect transistor (FET)-type biosensor; nanogap; nanogap-embedded FET; sensitivity; surface potential; threshold voltage; 2-D modeling; 2-D Poisson equation; FIELD-EFFECT TRANSISTOR; LABEL-FREE DETECTION; ELECTRICAL DETECTION; SHORT-CHANNEL; DNA;

D O I：

10.1109/TED.2010.2076152

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model of a nanogap-embedded field-effect transistor, which is termed here simply as a biotransistor, is developed in this study. A surface potential model is attained by solving a 2-D Poisson equation with approximation of a parabolic potential profile along the channel depth. The analytical threshold voltage is then derived from the surface potential model to comprise the unique feature of the biotransistor, which acts as a biosensor. A shift of the threshold voltage was used as a metric to ascertain the sensitivity after the biomolecule interacts with the biotransistor. Various device parameters were investigated in the developed analytical model. The characteristic trend is supported and verified via a simulation. Hence, the proposed model can provide a useful guideline for the optimal design and fabrication of a biotransistor.

引用

页码：3477 / 3484

页数：8

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