Slurry additive effects on the suppression of silicon nitride removal during CMP

被引：54

作者：

America, WG ^{[1
]}

Babu, SV

机构：

[1] IBM Corp, Microelect, Hopewell Jct, NY 12533 USA

[2] Clarkson Univ, Dept Chem Engn, Potsdam, NY 13699 USA

[3] Clarkson Univ, Ctr Adv Mat Proc, Potsdam, NY 13699 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 12期

关键词：

D O I：

10.1149/1.1817870

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The removal of silicon nitride during chemical mechanical planarization (CMP) of shallow trench isolation structures occurs through tribological wear-induced conversion of the nitride to an oxide. Hence, silicon nitride removal rate can be drastically reduced if appropriate chemicals that can inhibit this conversion at the surface are added to the CMP slurry. This paper presents data on the effects of numerous amino acids and other chemical additives with ceria abrasives on the removal rate of silicon nitride during CMP. A mechanism is presented that explains the suppression of nitride removal during CMP, observed only with some of the amino acids and proline in particular. (C) 2004 The Electrochemical Society.

引用

页码：G327 / G330

页数：4

共 28 条

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