VFB roll-off in HfO2 gate stack after high temperature annealing process -: A crucial role of out-diffused oxygen from HfO2 to Si

被引：40

作者：

Akiyama, K. ^{[1
]}

Wang, W. ^{[2
]}

Mizubayashi, W. ^{[2
]}

Ikeda, M. ^{[1
]}

Ota, H. ^{[2
]}

Nabatame, T. ^{[1
]}

Toriumi, A. ^{[2
]}

机构：

[1] MIRAI ASET, Tsukuba, Ibaraki 3058569, Japan

[2] AIST, MIRAI ASRC, Tsukuba, Ibaraki 3058569, Japan

来源：

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2007年

关键词：

D O I：

10.1109/VLSIT.2007.4339732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report for the first time that V-FB roll-off behavior observed in thinner EOT region for metal/HfO2/SiO2 stacks is directly related to re-oxidation at the bottom SiO2/Si interface. Based on this understanding, we propose a possible solution for keeping high effective work-function (phi(m,eff)) without V-FB roll-off and demonstrate the obtained phi(m,eff) value of 4.9eV in Pt3Si/HfO2/SiO2 stack.

引用

页码：72 / +

页数：2