Effects of Double Substitution with Ge and Te on Thermoelectric Properties of a Skutterudite Compound

被引:13
作者
Duan, Bo [1 ]
Zhai, Pengcheng [1 ]
Liu, Lisheng [1 ]
Zhang, Qingjie [1 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
基金
中国国家自然科学基金;
关键词
Skutterudite; double substitution; microstructure; thermoelectric properties; TRANSPORT-PROPERTIES; FILLING FRACTION; COSB3; PERFORMANCE;
D O I
10.1007/s11664-010-1457-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Studies have shown that the thermoelectric properties of CoSb3 could be improved by the substitution of group IVB or VIB elements for Sb. However, the substitution volume is limited. To get a better picture of the substitution volume in view of thermoelectric properties, Ge and Te double-substituted skutterudite materials were prepared with the nominal composition of Co4Sb (x) Ge5.9-0.5x Te6.1-0.5x (x = 11, 10, 9, 8) by the traditional solid-state reaction method and spark plasma sintering, and Rietveld analysis was employed to refine the crystal structure. The results showed that the lattice parameter decreased linearly and the solubility limitations of group IVB and VIB elements were greatly alleviated by the Ge and Te codoping. Besides, the thermoelectric properties were analyzed through measurements of electrical and thermal conductivities as well as room-temperature electrical transport properties. The results showed that the substitution volume of Ge and Te could play an important role in the thermoelectric properties, and a minimum lattice thermal conductivity value of 1.56 W m(-1) K-1 was obtained at around 673 K for Co4Sb8Ge1.9Te2.1. Co4Sb11Ge0.4Te0.6 achieved the best figure of merit of 0.89 at around 773 K, which was remarkably improved over that of untreated CoSb3.
引用
收藏
页码:932 / 936
页数:5
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