Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode

被引：5

作者：

Nakamura, F ^{[1
]}

Kobayashi, T ^{[1
]}

Tojo, T ^{[1
]}

Asatsuma, T ^{[1
]}

Naganuma, K ^{[1
]}

Kawai, H ^{[1
]}

Ikeda, M ^{[1
]}

机构：

[1] Sony Corp, Res Ctr, Hogogaya Ku, Yokohama, Kanagawa 240, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 11期

关键词：

D O I：

10.1049/el:19980759

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The room-temperature pulsed operation of a five GaInN multiple-quantum-well (MQW) laser diode (LD) is reported. The lowest threshold current density was 9.5kA/cm(2). The highest external differential quantum efficiency was 49% for a 1 mm long cavity. The laser wavelength was 417.5 nm with a full width at half maximum (FWHM) of less than the spectrum resolution of 0.2 nm. The characteristic temperature was 185 K. Pulsed operation of the LD up to 80 degrees C was demonstrated. Laser operation was confirmed with a duty cycle up to 10%.

引用

页码：1105 / 1107

页数：3