Simultaneous phase separation and basal-plane atomic ordering in InxGa1-xN

被引：11

作者：

Shimotomai, M ^{[1
]}

Yoshikawa, A

机构：

[1] Chiba Univ, Fac Engn, Dept Elect & Mech Engn, Inage Ku, Chiba 2638522, Japan

[2] Kawasaki Steel Corp, Tech Res Labs, Chiba 2600835, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 22期

关键词：

D O I：

10.1063/1.122736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

lReported discrepancy of phase separation in InxGa1-xN films between experimental studies and theoretical calculations based on the usual regular solution model is discussed from the standpoint of phase diagram. The inclusion of higher-order pairwise interactions in the theoretical model may allow the system to undergo a spinodal decomposition in an asymmetrical manner as revealed by experiments. It is suggested that basal-plane atomic ordering in the In-rich precipitates should accompany the decomposition. (C) 1998 American Institute of Physics. [S0003-6951(98)00948-6].

引用

页码：3256 / 3258

页数：3

共 15 条

[1] GROUND STATE STRUCTURES IN ORDERED BINARY-ALLOYS WITH SECOND NEIGHBOR INTERACTIONS [J].

ALLEN, SM ;

CAHN, JW .

ACTA METALLURGICA, 1972, 20 (03) :423-&

[2]

COOK HE, 1965, T METALL SOC AIME, V233, P142

[3]

HILLIARD JE, 1969, PHASE TRANSFORMATION, P497

[4] Incomplete solubility in nitride alloys [J].

Ho, IH ;

Stringfellow, GB .

III-V NITRIDES, 1997, 449 :871-880

[5]

KOBAYASHI K, 1995, P 14 EL MAT S, P141

[6] Long range order in AlxGa1-xN films grown by molecular beam epitaxy [J].

Korakakis, D ;

Ludwig, KF ;

Moustakas, TD .

APPLIED PHYSICS LETTERS, 1997, 71 (01) :72-74

[7]

MATSUOKA T, 1997, P 2 INT C NITR SEM, P19

[8] Phase separation in InGaN/GaN multiple quantum wells [J].

McCluskey, MD ;

Romano, LT ;

Krusor, BS ;

Bour, DP ;

Johnson, NM ;

Brennan, S .

APPLIED PHYSICS LETTERS, 1998, 72 (14) :1730-1732

[9] Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1996, 69 (20) :3034-3036

[10] PREPARATION AND OPTICAL-PROPERTIES OF GA1-XINXN THIN-FILMS [J].

OSAMURA, K ;

NAKA, S ;

MURAKAMI, Y .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3432-3437

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