Ion transport studies on vacuum deposited PbSnI4 thin films

被引：4

作者：

Kuku, TA ^{[1
]}

机构：

[1] Obafemi Awolowo Univ, Dept Elect & Elect Engn, Ife, Nigeria

[2] Univ Pavia, Dipartimento Chim Fis, CNR, CSTE, I-27100 Pavia, Italy

来源：

THIN SOLID FILMS | 1999年 / 340卷 / 1-2期

关键词：

conductivity; electrical properties; halides; solid electrolyte interface;

D O I：

10.1016/S0040-6090(98)00869-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of the material PbSnI4 have been deposited by vacuum evaporation. The electrical conductivity, its activation energy and dielectric breakdown strength have been found to be him thickness dependent for films less than or equal to 5000 Angstrom. Conductivity is by anionic defect motion with an activation energy of 0.320 eV and ionic transference number of 0.995 at room temperature. The ionic transport has been independently verified by an electrochemical cell potential method with the use of the material in an all thin film solid state: battery of the configuration M/PbSnI4/(AgI,Ag) M = n, Pb), giving OCV values close to the thermodynamic theoretical maximum for the formation of MI2 at the anode. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：292 / 296

页数：5

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