critical current density degradation;
HTS stacked tapes;
numerical analysis;
self field effects;
D O I:
10.1109/77.919924
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
As we stack HTS tapes, the critical current of stacked tapes is much less than the total summation of the critical current of each tape. This is mainly due to self magnetic field effects, and its behavior has been analyzed by load line or numerical methods with some assumptions. In this paper, we propose a simple numerical model to calculate the critical current of stacked tapes more exactly, To do this, we measured J(c)-B curves of a HTS tape for various values of external magnetic fields and the angles between the magnetic field and the tape surface, Using this experimental data, the current density distribution in the cross section of stacked tapes is calculated numerically and the results are compared to both experimental values and the ones from load line analysis method, calculated simply by assuming uniform current density across the tapes.