High pressure synthesis of an iodine doped silicon clathrate compound

被引：73

作者：

Reny, E ^{[1
]}

Yamanaka, S

Cros, C

Pouchard, M

机构：

[1] Hiroshima Univ, Fac Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

[2] Japan Sci & Technol Corp, CREST, Tokyo, Japan

[3] Univ Bordeaux 1, Inst Chim Mat Condensee Bordeaux, F-33608 Pessac, France

来源：

CHEMICAL COMMUNICATIONS | 2000年 / 24期

关键词：

D O I：

10.1039/b007632p

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A silicon clathrate compound doped with an electronegative element, I8Si46-xIx (x = 1.5 +/- 0.5), has been prepared for the first time using high pressure and high temperature conditions.

引用

页码：2505 / 2506

页数：2

共 12 条

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