Strain-compensated MQW InGaAsP/InGaAsP gain- and index-coupled laser arrays grown by MOVPE under N2

被引：4

作者：

Piataev, V ^{[1
]}

Kuphal, E ^{[1
]}

Jochum, S ^{[1
]}

Hansmann, S ^{[1
]}

Janning, H ^{[1
]}

Kempf, B ^{[1
]}

Gobel, R ^{[1
]}

Hubner, B ^{[1
]}

Burkhard, H ^{[1
]}

机构：

[1] Deutsche Telekom AG, Technol Zentrum, D-64307 Darmstadt, Germany

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Buried index-coupled and gain-coupled distributed feedback (DFB) lasers (lambda=1.55 mu m) and laser arrays with wavelength spacing between channels of 1.6 nm and 3.2 nm have been realized and investigated on different strain-compensated InGaAsP/InGaAsP MQW structures, which are grown on InP bq; MOVPE with constant As/P ratio under N-2 as carrier gas for the first time. The grown structures exhibit an extremely good wavelength homogeneity ( sigma = 0.75 nm ). The lowest threshold current of 2.3 mA at 20 degrees C has been obtained for uncoated index-coupled DFB lasers. More than 40 mW CW and 70 mW pulsed output power are achieved at an injection current of 200 mA from one facet of a DFB laser with AR coating.

引用

页码：357 / 360

页数：4