Li-substitution effect and ferroelectric properties in piezoelectric semiconductor ZnO

被引:47
作者
Onodera, A [1 ]
Yoshio, K
Satoh, H
Yamashita, H
Sakagami, N
机构
[1] Hokkaido Univ, Fac Sci, Dept Phys, Sapporo, Hokkaido 0600810, Japan
[2] Hakodate Natl Coll Technol, Hakodate, Hokkaido 0420953, Japan
[3] Hokkai Gakuen Univ, Fac Engn, Dept Elect & Informat Engn, Sapporo, Hokkaido 0640926, Japan
[4] Akita Natl Coll Technol, Akita 0118511, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 9B期
关键词
zinc oxide; piezoelectric; ferroelectric semiconductor; specific heat; II-VI semiconductor; ferroelectricity;
D O I
10.1143/JJAP.37.5315
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric properties and the effects of Lj-substitution were studied in hot-pressed ceramics and single crystals of semiconducting ZnO. The transition temperature (T-c) of Zn0.9Li0.1O ceramic samples synthesized by the spark plasma sintering method increases to 470 K, while it was 330 K in previous cold-pressed ceramics. Single crystals of ZnO, the T-c of which is 430 K, were grown by the hydrothermal method and annealed in an atmosphere of Li at 920 K for 24 hours. Although the dielectric and thermal behaviors are almost the same as those reported in previous works, T-c increases by 140 K. The ferroelectric transition temperature is strongly influenced by the procedures of sample preparation: annealing in an atmosphere of Li was found to be effective for introducing Li into single crystals.
引用
收藏
页码:5315 / 5317
页数:3
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