Conductivity and switching phenomena in Mn-doped perovskite single crystals and manganite thin films

被引:30
作者
Noginova, N
Loutts, GB
Gillman, ES
Atsarkin, VA
Verevkin, AA
机构
[1] Norfolk State Univ, Ctr Mat Res, Norfolk, VA 23504 USA
[2] Russian Acad Sci, Inst Radio Engn & Elect, Moscow 103907, Russia
[3] Yale Univ, New Haven, CT 06520 USA
来源
PHYSICAL REVIEW B | 2001年 / 63卷 / 17期
关键词
D O I
10.1103/PhysRevB.63.174414
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For better understanding of the charge-transport mechanisms in perovskite manganites, along with colossal magnetoresistance (CMR) materials, such as La1-xSrxMnO3, we study systems with decreased content of Mn ions, such as single crystals of LaGa1-xMnxO3 (0<x<0.5). The conductivity of all the systems in study can be described adequately with a nonadiabatic approximation of the hopping model with the values of the activation energy and resistivity coefficient strongly dependent on the concentration of Mn ions. Nonlinear voltage-current characteristics demonstrated switching to the low-resistivity state at high current density in LaGa1-xMnxO3 crystals as well as in CMR films of low crystallinity. We explain the obtained results based on the small-polaron-hopping model, taking into account the heating processes and percolation effects.
引用
收藏
页码:1744141 / 1744146
页数:6
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