Formation of a schottky barrier between eutectic Ga,In and thiophene oligomers

The formation of a Schottky barrier between an eutectic (Ga,In) alloy and a highly doped thiophene oligomer is followed as a function of time using current density-voltage and capacitance-voltage measurements. Within 1 h, the diode characteristics change from almost nonrectifying, leaky behavior into a rectification ratio of 10(4) with a considerably reduced leakage current. Measurements and energy band diagram calculations show that the depletion width increases with time due to a decrease in the ionizable acceptor density of the semiconductor at the Schottky interface. This is probably caused by a chemical reaction between the in-diffusing metals and the doped oligomer. (C) 1997 American Institute of Physics.