New perspectives of coloured LiF for optoelectronic devices

被引:51
作者
Baldacchini, G [1 ]
Montereali, RM [1 ]
机构
[1] ENEA, Ctr Ric Frascati, Div Fis Applicata, I-00044 Frascati, Italy
关键词
LiF; colour centre lasers; photoluminescence; thin films; integrated optics;
D O I
10.1016/S0925-3467(00)00059-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Colour centre lasers (CCL) based on LiF crystals have been operating at room temperature (RT) in the visible and in the near infrared since many years. On the other hand little is known about LIF films treated by low energy electrons, which are promising candidates for the realisation of miniaturised broad band active optical devices, like waveguide and microcavity amplifiers and lasers. The high concentration of defects produced in these optically confined active structures does not seem to affect appreciably the numerical value of the gain coefficients, although complex mechanisms of losses should be taken into account. Interactions among several types of defects in extremely coloured samples should be further investigated in crystals and films. The formation of different kind of centres could be controlled by a careful choice of irradiation conditions and growth parameters in the polycrystalline films. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:53 / 61
页数:9
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