p-Type ZnO:N obtained by ion implantation of nitrogen with post-implantation annealing in oxygen radicals

被引：38

作者：

Georgobiani, AN

Gruzintsev, AN

Volkov, VT

Vorobiev, MO

Demin, VI

Dravin, VA

机构：

[1] RAS, PN Lebedev Phys Inst, Moscow 119991, Russia

[2] RAS, Inst Microelect Technol & High Pur Mat, Chernogolovka, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2003年 / 514卷 / 1-3期

关键词：

II-VI compounds; ion implantation; epitaxy; luminescence; acceptors;

D O I：

10.1016/j.nima.2003.08.092

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

It had been shown that ion implantation of nitrogen into zinc oxide film (nitrogen is an acceptor impurity in ZnO) could result in the formation of the hole type of conductivity only in the case of annealing in the atmosphere of oxygen radicals. The ion implantation and the following annealing had influenced not only at the electrical properties of ZnO:N+ layers but also at their photoluminescence spectra. The luminescence bands which are due to the introducing of nitrogen had appeared in the ultraviolet and visible ranges of spectra. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：117 / 121

页数：5

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