Optical properties of silicon nanocrystallites in polycrystalline silicon films prepared at low temperature by plasma-enhanced chemical vapor deposition

被引:81
作者
Milovzorov, DE [1 ]
Ali, AM
Inokuma, T
Kurata, Y
Suzuki, T
Hasegawa, S
机构
[1] RAS, IRE, Moscow 103907, Russia
[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[3] Kanazawa Univ, Fac Technol, Dept Elect & Comp Engn, Kanazawa, Ishikawa 920, Japan
关键词
photoluminescence; second-harmonic generation; poly-Si films; plasma-enhanced chemical vapor deposition; nanocrystallites;
D O I
10.1016/S0040-6090(00)01208-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon crystallites produced by low-temperature plasma-enhanced chemical vapor deposition technique have been shown to have size-dependent photoluminescent and second harmonic generation responses. The crystalline volume fraction was estimated by Raman spectra and the grain sizes of crystallites were measured by X-ray diffraction. The structural chemical properties of poly-Si films were studied by means of Fourier-transform infrared spectroscopy and transmission spectrophotometry. The size and shape-dependent second-harmonic generation (SHG) of poly-Si films is also studied. The resonant SHG spectra show the fine structure with peak position at approximately 3.26 eV which is attributed to the response from Si-SiO2 interface (for aged films). The second resonant peak can be explained as the size-dependent SHG response from the bulk of nanocrystallites. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:47 / 55
页数:9
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