Laser processing of amorphous silicon for large-area polysilicon imagers

被引：13

作者：

Boyce, JB ^{[1
]}

Fulks, RT ^{[1
]}

Ho, J ^{[1
]}

Lau, R ^{[1
]}

Lu, JP ^{[1
]}

Mei, P ^{[1
]}

Street, RA ^{[1
]}

Van Schuylenbergh, KF ^{[1
]}

Wang, Y ^{[1
]}

机构：

[1] Xerox Palo Alto Res Ctr, Palo Alto, CA 94024 USA

来源：

THIN SOLID FILMS | 2001年 / 383卷 / 1-2期

关键词：

polysilicon; laser crystallization; imager; thin-film transistor; amorphous silicon;

D O I：

10.1016/S0040-6090(00)01585-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pulsed excimer-laser processing of amorphous silicon on non-crystalline substrates allows for the fabrication of high-quality polysilicon materials and thin-film transistors (TFTs). Under optimized processing conditions, these polysilicon TFTs have high mobilities, sharp turn-on, low off-state leakage currents and good spatial uniformity. These improved parameters, particularly the low off-state leakage currents and good uniformity, enable, not only displays, but also the more demanding hat-panel imaging arrays to be fabricated in polysilicon, and results on an imager are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：137 / 142

页数：6

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