Advances in RTP temperature measurement and control

被引：9

作者：

Peuse, B ^{[1
]}

Miner, G ^{[1
]}

Yam, M ^{[1
]}

Elia, C ^{[1
]}

机构：

[1] Appl Mat Thermal Proc Org, Santa Clara, CA 95054 USA

来源：

RAPID THERMAL AND INTEGRATED PROCESSING VII | 1998年 / 525卷

关键词：

D O I：

10.1557/PROC-525-71

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reviews work to develop and improve the temperature measurement and control technology of a commercial rapid thermal processing (RTP) system. A description of the main features of this system is given, which includes a concentric multi-zone lamp heating source, multi-point temperature measurement system and real time wafer temperature control. Innovations in RTP optical thermometry are described which resulted in improved low temperature performance, a real time spectral emissivity measurement tool which enables emissivity independent temperature measurement and an improved temperature calibration capability. The multi-input multi-output (MIMO) optimal wafer temperature control methodology is discussed. Process results demonstrating an equivalent process temperature performance of 4 degrees C, 3-sigma, all-points-all-wafers will be presented.

引用

页码：71 / 85

页数：15