Recent progress in crystal growth and conductivity control of wide bandgap group III nitride semiconductors

被引：2

作者：

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS II | 1998年 / 510卷

关键词：

D O I：

10.1557/PROC-510-145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent progress in crystal growth of wide bandgap group III nitrides on highly-mismatched substrates has enabled us to produce high-quality GaN, AlGaN, GaInN and quantum well structures. High-performance blue and green light-emitting diodes and room temperature operation of nitride-based laser diodes have also been realized. Today, steady progress is being made in the areas of crystal growth and device performance. However, much further advances are required in many areas of materials science and device fabrication of the nitrides.

引用

页码：145 / 154

页数：6