Substrate effect on structural modification of C60 induced by 110 MeV Ni ion

110 MeV Ni ion irradiation effects on C-60 thin films grown on Si(100) and float glass substrates were studied using Raman spectroscopy. Raman data indicates that C-60 samples deposited on Si substrate produce more pronounced polymerization at low fluences as compared to C-60 samples deposited on float glass substrate. Maximum polymerization has been observed at the smallest incremental value of the fluence of 1 x 10(11) ions/cm(2) for C-60 samples on Si substrate as compared to the samples on float glass substrate, where maximum polymerization is attained at a fluence of 2 x 10(13) ions/cm'. It is due to efficient energy distribution in the film on Si substrate. X-ray diffraction studies indicate that the C-60 film on Si substrate is more ordered as compared to that on float glass substrate. It is important to note here that due to efficient distribution of energy over a larger volume of the sample, quantitatively polymerization is more for the film on Si substrate compared to that on float glass substrate. The small level of amorphous carbon features at low fluences and the increasing polymerization trend up to a fluence of 10(13) ions/cm(2) for float glass substrate, suggests that the damage in this case is more localized. Further work is in progress to study these aspects in detail. (C) 2003 Elsevier B.V. All rights reserved.