SnS thin-films by RF sputtering at room temperature

被引：236

作者：

Hartman, Katy ^{[1
]}

Johnson, J. L. ^{[2
]}

Bertoni, Mariana I. ^{[1
]}

Recht, Daniel ^{[3
]}

Aziz, Michael J. ^{[3
]}

Scarpulla, Michael A. ^{[2
]}

Buonassisi, Tonio ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

[2] Univ Utah, Salt Lake City, UT 84112 USA

[3] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 21期

基金：

美国国家科学基金会;

关键词：

Tin sulfide; Tin monosulfide; RF sputtering; Solar cells; Photovoltaics; TIN SULFIDE; OPTICAL-PROPERTIES; SOLAR-CELLS; DEPOSITION;

D O I：

10.1016/j.tsf.2010.12.186

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin monosulfide (SnS) is of interest as a potential solar cell absorber material. We present a preliminary investigation of the effects of sputtering conditions on SnS thin-film structural, optical, and electronic properties. Films were RF sputtered from an SnS target using an argon plasma. Resistivity, stoichiometry, phase, grain size and shape, bandgap, and optical absorption coefficient can be varied by modifying argon pressure for a fixed deposition time. Most films have an indirect bandgap in the range of 1.08-1.18 eV. XRD patterns confirmed the films as mostly crystalline, and grain morphology was examined using profile and surface SEM images. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：7421 / 7424

页数：4

共 21 条

[1] THE PREPARATION AND THE ELECTRICAL AND OPTICAL PROPERTIES OF SNS CRYSTALS [J].