Low-temperature deposition of hydrogenated amorphous silicon in an electron cyclotron resonance reactor for flexible displays

被引：15

作者：

Flewitt, AJ ^{[1
]}

Milne, WI ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

PROCEEDINGS OF THE IEEE | 2005年 / 93卷 / 07期

关键词：

amorphous materials; displays; plasma chemical vapor deposition (CVD); thin-film transistors (TFTs);

D O I：

10.1109/JPROC.2005.851533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) is investigated as a technique for depositing hydrogenated amorphous silicon (a-Si: H) at a temperature of 80 degrees C, which is compatible with the use of transparent, plastic substrates. The ECR-PECVD reactor is described and the principles underlying its operation explained In particular the factors controlling the deposition of a-Si: H by this technique are investigated, and it is shown that control of gas phase reactions between silane and hydrogen species is essential. High-quality a-Si: H is deposited in a narrow processing window with a photosensitivity greater than 10(6). Thin-film transistors (TFTS) fabricated at 125 degrees C incorporating low-temperature a-Si: Has the channel layer have a switching ratio of almost 10(5). With further optimization of the other material layers, such TFTs could be used for the active matrix transistors in flexible liquid crystal displays on plastic substrates.

引用

页码：1364 / 1373

页数：10

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