Structural, optical and electrical properties of CuIn5Se8 and CuGa5Se8

被引：24

作者：

Durán, L

Guerrero, C

Hernández, E

Delgado, JM

Contreras, J

Wasim, SM

Rincón, CAD

机构：

[1] Univ Zulia, Fac Ciencias Expt, Dept Fis, Lab Ciencia Mat, Maracaibo, Venezuela

[2] Univ Los Andes, Fac Ciencias, Ctr Nacl Difracc Rayos 10, Merida 5251, Venezuela

[3] Univ Los Andes, Fac Ciencias, Ctr Estudios Semicond, Merida 5251, Venezuela

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2003年 / 64卷 / 9-10期

关键词：

semiconductors; alloys; crystal structure; optical properties; electrical properties;

D O I：

10.1016/S0022-3697(03)00069-6

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ingots of CuIn5Se8 and CuGa5Se8 were prepared by direct fusion of the stoichiometric mixture of the elements. The analysis of X-ray powder diffraction data showed the presence of one single phase with tetragonal structure for CuGa5Se8 and two phases with hexagonal and tetragonal structure for CuIn5Se8. The lattice parameters a and c were refined by means of the program NBS*AIDS83. The phase transition temperatures were obtained by Differential Thermal Analysis measurements performed on samples scaled in evacuated quartz ampoules. Transmittance measurements were used to determine the absorption coefficient a. The values of E,, were obtained from a plot of (alphahv)(2) vs. h v. The electrical resistivity was measured from 10 to 400 K using a four-wire configuration. The activation energies were estimated from the Arrhenius plot of the resistivities. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1907 / 1910

页数：4

共 19 条

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