A dislocation-based description of grain boundary dissociation:: Application to a 90° ⟨110⟩ tilt boundary in gold

被引:68
作者
Medlin, DL [1 ]
Foiles, SM
Cohen, D
机构
[1] Sandia Natl Labs, Livermore, CA 94551 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
关键词
grain boundary dissociation; grain boundaries; dislocations; transmission electron microscopy (TEM); theory & modeling;
D O I
10.1016/S1359-6454(01)00284-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High resolution transmission electron microscopy (HRTEM) observations and atomistic simulations of {1 (1) over bar1}/{121} facets in a gold 90 degrees tilt boundary show the presence of a similar to 10 Angstrom wide layer with stacking faults distributed one to every three close-packed planes. This interfacial reconstruction, which forms the rhombohedral 9R stacking arrangement, is similar to that found previously for near-Sigma = 3{112} boundaries in low stacking fault energy metals. We discuss a general approach for partitioning grain boundary orientation into a set of Shockley partial dislocations and then apply this description to the {11}/{121} interface. The analysis explains both the distribution of faults and the geometry of the local plane bending and shows, further, that the 9R stacking occurs in both the Sigma = 3{112} and {1 (1) over bar1}/{121} interfaces due to the similar ratios of 30 degrees and 90 degrees Shockleys in both cases. Finally, we discuss limitations of this description, in particular concerning a 1/8[(1) over bar 01] relaxation that is predicted by the atomistic simulations. published by Elsevier Science Ltd on behalf of Acto Materialia Inc.
引用
收藏
页码:3689 / 3697
页数:9
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