Molecular volume dependence of the electronic and ionic polarizabilities in TiO2 and SiO2 -: art. no. 062902

被引:9
作者
Devine, RAB
Busani, T
机构
[1] USAF, Res Lab, Space Vehicles Directorate, Kirtland AFB, NM 87117 USA
[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[3] CNRS, LEMD, F-38042 Grenoble, France
关键词
D O I
10.1063/1.1861511
中图分类号
O59 [应用物理学];
学科分类号
摘要
The molecular volume dependence of the ionic and electronic parts of the molecular polarizability in SiO2 and TiO2 polymorphs is examined. It is demonstrated that their variation should not be neglected when using models such as the "additivity rule" to predict multicomponent oxide dielectric constants. (C) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
相关论文
共 9 条
[1]  
Bruckner R., 1970, Journal of Non-Crystalline Solids, V5, P123, DOI 10.1016/0022-3093(70)90190-0
[2]  
BUNGET I, 1984, PHYSICS SOLID DIELEC, pCH6
[3]  
BUSANI T, UNPUB
[4]   SiO2 stishovite under high pressure: Dielectric and dynamical properties and the ferroelastic phase transition [J].
Lee, CY ;
Gonze, X .
PHYSICAL REVIEW B, 1997, 56 (12) :7321-7330
[5]  
Pauling L., 1960, NATURE CHEM BOND
[6]   PI BONDING AND DELOCALIZATION EFFECTS IN SIO2 POLYMORPHS [J].
REVESZ, AG .
PHYSICAL REVIEW LETTERS, 1971, 27 (23) :1578-&
[7]   Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrode, and self-aligned source and drain [J].
Rotondaro, ALP ;
Visokay, MR ;
Shanware, A ;
Chambers, JJ ;
Colombo, L .
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (10) :603-605
[8]   DIELECTRIC POLARIZABILITIES OF IONS IN OXIDES AND FLUORIDES [J].
SHANNON, RD .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (01) :348-366
[9]  
YU Y, 1991, PHYS REV B, V42, P11048