Crystalization of amorphous SiGe thin films

被引：6

作者：

Tong, HY ^{[1
]}

King, TJ ^{[1
]}

Shi, FG ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

THIN SOLID FILMS | 1996年 / 290卷

关键词：

crystallization; free energy barrier;

D O I：

10.1016/S0040-6090(96)08971-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The rate of nucleation and the rate of growth of crystallites in amorphous Si50Ge50 thin films was determined using transmission electron microscopy. With the data on nucleation and growth kinetics, the temperature dependence of the nucleation free energy barrier W* was obtained using a recently developed method. Within the temperature range of 525 similar to 575 degrees C, the nucleation free energy barrier shows a linear increase with temperature and the mean value of W* is 1.92 eV. The theoretical relationship, developed by the authors, between the nucleation free energy barrier and the average grain size in the fully crystallized Si50Ge50 thin films was examined in the light of the present data.

引用

页码：464 / 468

页数：5

共 11 条

[1]

BELK JA, 1965, ELECT MICROSCOPY MIC, P96

[2]

DUNSTAN DJ, 1991, SEMICOND SCI TECH, V6, pA76

[3] IMPROVEMENT IN HETEROEPITAXIAL FILM QUALITY BY A NOVEL SUBSTRATE PATTERNING GEOMETRY [J].