Localization of metastable atom beams with optical standing waves: Nanolithography at the Heisenberg limit

被引:267
作者
Johnson, KS [1 ]
Thywissen, JH [1 ]
Dekker, NH [1 ]
Berggren, KK [1 ]
Chu, AP [1 ]
Younkin, R [1 ]
Prentiss, M [1 ]
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
关键词
D O I
10.1126/science.280.5369.1583
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The spatially dependent de-excitation of a beam of metastable argon atoms, traveling through an optical standing wave, produced a periodic array of localized metastable atoms with position and momentum spreads approaching the limit stated by the Heisenberg uncertainty principle. Silicon and silicon dioxide substrates placed in the path of the atom beam were patterned by the metastable atoms. The de-excitation of metastable atoms upon collision with the surface promoted the deposition of a carbonaceous film from a vapor-phase hydrocarbon precursor, The resulting patterns were imaged both directly and after chemical etching. Thus, quantum-mechanical steady-state atom distributions can be used for sub-0.1-micrometer lithography.
引用
收藏
页码:1583 / 1586
页数:4
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